Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED
The novel properties of semiconductor nanowires are interesting [1] for application and could be useful for application in nanoelectronics and photonics. Depending on the band gap and size of particular semiconductor nanowires, the shift in absorption/emission is observed. The samples were grown by...
| Permalink: | http://161.53.241.124/Record/ffzg.KOHA-OAI-FFZG:315832/Similar |
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| Matična publikacija: |
Proceedings of 14th European Microscopy Congress EMC 2008, Volumen 2, Materials Science Berlin : Springer, 2008 |
| Glavni autori: | Tonejc, Anđelka (-), Gradečak, Silvija (Author), Tonejc, Antun Bijelić, Mirjana, Posilović, Hrvoje Bermanec, Vladimir, Tambe, Michael |
| Vrsta građe: | Članak |
| Jezik: | eng |
APA stil citiranja
Tonejc, A. (2008). Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED: Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED. Proceedings of 14th European Microscopy Congress EMC 2008, Volumen 2, Materials Science.
Chicago stil citiranjaTonejc, Anđelka. "Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED: Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED." 2008.
MLA stil citiranjaTonejc, Anđelka. "Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED: Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED." 2008.